| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10707160 | Journal of Crystal Growth | 2011 | 5 Pages |
Abstract
⺠We examine minority carrier lifetimes in type II strained layer superlattices. ⺠Effect of interfaces found to be of secondary importance. ⺠Lifetimes in InAs and GaSb are found to improve with growth temperature. ⺠In general lifetimes appear to be reduced by the presence of GaSb. ⺠Native defects are proposed as the origin of the recombination centers.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
S.P. Svensson, D. Donetsky, D. Wang, H. Hier, F.J. Crowne, G. Belenky,