| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10707163 | Journal of Crystal Growth | 2011 | 5 Pages |
Abstract
⺠MBE growth of GaN nanowires on ALD aluminum oxide. ⺠Nanowires grow crystalline regardless of amorphous nature of Al2O3 layer. ⺠Nanowires are free of dislocations even at Al2O3 interface. ⺠Yields method of producing crystalline material on amorphous substrate.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Kevin Goodman, Vladimir Protasenko, Jai Verma, Tom Kosel, Grace Xing, Debdeep Jena,