| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10707171 | Journal of Crystal Growth | 2011 | 8 Pages |
Abstract
⺠We have shown that epitaxial film morphology depends on material, surface orientation and process conditions. ⺠Deposition kinetics depends on surface orientation. ⺠The kinetics anisotropy is based on dangling bond density and surface structure. ⺠SiGe material is more impacted by the kinetics anisotropy than that Si material. ⺠For SiGe material, kinetics anisotropy is supposed to have other contributions such as growth mode and germanium mixing considerations.
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Clément Pribat, Didier Dutartre,