Article ID Journal Published Year Pages File Type
10707193 Journal of Crystal Growth 2011 4 Pages PDF
Abstract
Area selective epitaxy of InAs on semi-insulating GaAs(0 0 1) and GaAs(1 1 1)A substrates masked by SiO2 has been investigated by using migration enhanced epitaxy (MEE). Successful area selective epitaxy has been achieved in an optimized substrate temperature range 460°C
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Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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Area selective epitaxy of InAs on GaAs(0 0 1) and GaAs(1 1 1)A by migration enhanced epitaxy
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