(1 0 0) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies of hole quantum wires

We have developed undoped (1 0 0) GaAs/Al0.34Ga0.66As heterostructures, in which a 2D hole system is introduced by a heavily carbon doped field effect gate. We compare transport and mobility data from these (1 0 0) undoped devices with conventional Si modulation doped p-type devices grown on (3 1 1) substrates. Finally we present conductance quantization data for hole quantum wires made of these (1 0 0) heterostructures.