Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10707218 | Journal of Crystal Growth | 2011 | 4 Pages |
Abstract
Comparative study of growth kinetics of the AlxGa1âxN (x=0-1) layers grown by plasma-assisted molecular beam epitaxy (PA MBE) under different growth conditions (group III to activated nitrogen and Al to Ga flux ratios) is presented. The strong influence of elastic stress on the surface morphology, growth rate and Al content in AlxGa1âxN (x=0-1) layers is most pronounced for the AlxGa1âxN films with high Al-content grown atop of the 2D-AlN buffer layer at near the unity flux ratio FIII/FNâ¼1. The use of strong Ga-rich growth conditions with FIII/FNâ¼1.6-2 for the growth of AlxGa1âxN/2D-AlN with high Al-content (x>0.25) allows one to reduce the strain effect as well as provide smooth surface morphology and precise control of Al content in the AlxGa1âxN (x=0-1) layers by employing a simple ratio x=FAl/FN.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
A.M. Mizerov, V.N. Jmerik, M.A. Yagovkina, S.I. Troshkov, P.S. Kop'ev, S.V. Ivanov,