Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10707224 | Journal of Crystal Growth | 2011 | 4 Pages |
Abstract
Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on nano-patterned 3C-SiC/Si (0Â 0Â 1) substrates with negligible hexagonal content and less defect density than in planar cubic GaN layers. Nano-patterning of 3C-SiC/Si (0Â 0Â 1) is achieved by self-ordered colloidal masks for the first time. The method presented here offers the possibility to create nano-patterned cubic GaN without the need for a GaN etching process and thus is a potential alternative to the conventional top-down fabrication techniques.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
R.M. Kemper, M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, J.K.N. Lindner, K. Lischka, D.J. As,