Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10707244 | Journal of Crystal Growth | 2011 | 4 Pages |
Abstract
MBE growth conditions, SEM and XRD structural characterization and experimental studies of optical properties are presented for Pb1âxEuxTe/CdTe semiconductor heterostructures grown on GaAs (0Â 0Â 1) substrate with a thick CdTe buffer layer. Photoluminescence excited by pulsed YAG:Nd laser was studied in the mid-infrared spectral region for 12.5Â nm-thick Pb1âxEuxTe quantum wells (x=0-0.038) with 75Â nm-thick CdTe barriers. Increasing the Eu content up to about 4Â at% permitted large infrared photoluminescence tuning from 0.34 to 0.465Â eV due to the increase in Pb1âxEuxTe bandgap.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
E. Smajek, M. Szot, L. Kowalczyk, V. Domukhovski, B. Taliashvili, P. Dziawa, W. Knoff, E. Åusakowska, A. Reszka, B. Kowalski, M. Wiater, T. Wojtowicz, T. Story,