Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10707253 | Journal of Crystal Growth | 2011 | 4 Pages |
Abstract
We developed a new scheme using modulated stacking of self-assembled InAs QDs on InP(3Â 1Â 1)B substrates with strain compensation to fabricate QDs in order to expand the potential bandwidths of QD active regions. A highly stacked QD structure was fabricated by the strain-compensation technique with no degradation of structural and optical qualities. The full-width at half-maximum of the photoluminescence of QDs is expanded to 240Â nm in the modulated stacking structure. Carrier transfer from the small QD layer to the large QD layer was observed in the stacking structure with a thin spacer layer.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Kouichi Akahane, Naokatsu Yamamoto,