| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10707309 | Journal of Crystal Growth | 2011 | 4 Pages |
Abstract
The growth of self-assembled (SA) quantum dots (QDs) on GaAs(0Â 0Â 1) by molecular beam epitaxy (MBE) is studied as a function of the In and As fluxes. Under growth rates below 0.05Â ML/s, we find that the density of QDs increases not only with increasing In flux but also with As flux. The formation mechanisms are discussed based on the results obtained by atomic force microscopy (AFM), and that As flux alters the surface diffusion, leading to the control of QD nucleus density.
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Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Itaru Kamiya, Takeo Shirasaka, Kenichi Shimomura, David M. Tex,