Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10707347 | Journal of Crystal Growth | 2011 | 4 Pages |
Abstract
Compositionally modulated GaP/GaAs1âxPx nanowires are grown by molecular beam epitaxy in the vapor liquid solid mode using Au as catalyst. By periodically supplying As, we achieve atomically flat and abrupt interfaces along the whole length of the nanowires. This is a step towards the realization of superlattices in nanowires.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
F. Jabeen, G. Patriarche, F. Glas, J.-C. Harmand,