Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10707418 | Journal of Crystal Growth | 2011 | 6 Pages |
Abstract
The first experimental results show single crystalline Si crystals with reproducible square cross sections up to 91Ã91 mm2 including rounded corners. Until now TMF frequencies of f=180 and 300 Hz and a phase shift of Ï=90° were applied. For high-purified material an average facet undercooling of ÎTâ2 K has been deduced from the observed rectangular side plane widths. According to high-resolution transmission electron microscopy (HRTEM) the four macroscopically flat faces are microscopically composed of {1 1 0} sub-facets and {1 1 1} macrosteps. Etch pit densities (EPD) between 0 and 104 cmâ2 were ascertained. Due to the magnetically induced high-speed melt flow toroid around the growing crystal a relatively low and homogeneously distributed oxygen concentration can be achieved. A minimum value of 7.5Ã1017 cmâ3 was measured in high-purity as-grown crystals at a TMF frequency of f=300 Hz.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
P. Rudolph, M. Czupalla, B. Lux, F. Kirscht, Ch. Frank-Rotsch, W. Miller, M. Albrecht,