Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10707456 | Journal of Crystal Growth | 2011 | 6 Pages |
Abstract
The influence of the substrate temperature on the epitaxial growth of In2O3 on Y-stabilized ZrO2(1 1 1) by oxygen plasma assisted molecular beam epitaxy has been investigated over a range between 550 and 860 °C. In all cases the films grow with (1 1 1) planes of the epilayer parallel to those of the substrate. Films grown at low temperature (T<650 °C) are characterised by a granular but continuous morphology. The high density of grain boundaries in these films may act as electron scattering centres, thus giving rise to low carrier mobility. For substrate temperatures above 700 °C, the films broke up into loosely connected mesa with serrated edges. The mesa had typical lateral dimensions of order 2-5 μm and exhibited atomically flat surface. X-ray diffraction shows that the change in film morphology releases strain. The effects of high temperature annealing on the properties of films deposited at low temperatures was also studied.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
K.H.L. Zhang, V.K. Lazarov, H.H.-C. Lai, R.G. Egdell,