Sb antisite defects in InSb epilayers prepared by metalorganic chemical vapor deposition

High quality InSb epilayers were grown epitaxially on InSb (1 0 0) by metalorganic chemical vapor deposition. Different growth temperatures and V/III ratios were employed in the growth and their effects on the quality of the grown films were studied. Low temperature photoluminescence spectra of the samples revealed that in addition to the main band-to-band emission around 5.4 μm, an emission peak around 5.87 μm was also be observed. Our results indicate that the low energy emission peak was originated from the antisite SbIn defects which can be removed by reducing the V/III ratio.