Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10707466 | Journal of Crystal Growth | 2011 | 5 Pages |
Abstract
As it is well known, the diffusivity of the atoms (e.g. Ga, As, Ge) and intermixing of layers during sample preparation strongly depend on the substrate temperature. We found that the use of a low temperature GaAs buffer layer reduced the diffusion in GaAs/Ge epitaxy at 600 °C; while a Ge low temperature buffer layer was not effective in reducing the interdiffusion in Ge/GaAs epitaxy at 700 °C.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Matteo Bosi, Giovanni Attolini, Claudio Ferrari, Cesare Frigeri, Marco Calicchio, Francesca Rossi, Kálmán Vad, Attila Csik, Zsolt Zolnai,