Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10707470 | Journal of Crystal Growth | 2011 | 6 Pages |
Abstract
InSb quantum dots (QDs) and quantum dashes (Q-dashes) were obtained on InAs-rich substrate by both LPE and MOVPE methods. Bimodal mechanism of the formation of the InSb quantum dots was observed on InAs binary surface during the LPE growth. The low-density (5Ã108Â cmâ2) big quantum dots with 12Â nm in height and high-density (1Ã1010Â cmâ2) small quantum dots with 4Â nm in height were found to be present simultaneously. Deposition from the InSb melt over the InAs0.61Sb0.13P0.26 matrix layer lattice-matched with InAs substrate resulted in the uniformity of the InSb QDs. The Q-dashes with density (2.5Ã109Â cmâ2) with dimensions of 30Â nm in height, 500Â nm in length and 200Â nm in width were grown by the MOVPE method. The obtained Q-dashes were oriented along the [1Â 1Â 0] direction. A drastic change in the dot geometry with dependence on III/V ratio of the components in the vapor phase was observed. The shape and the density of the InSb Q-dashes can be determined by the surface chemistry of the InAs(Sb,P) matrix layer.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Konstantin Moiseev, Petr Dement'ev, Vyacheslav Romanov, Maya Mikhailova,