Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10707478 | Journal of Crystal Growth | 2011 | 4 Pages |
Abstract
In this work, we present and compare the results obtained from different Si-based melts (Ge-Si, Al-Si and Al-Ge-Si) for growing SiC layers on α-SiC substrate by vapour-liquid-solid (VLS) mechanism. It was found that, depending on melt composition, the deposit could be either a complete 3C or α-SiC layer or even a mixture of these polytypes. The binary Al-Si melt leads systematically to a highly p-type homoepitaxial α-SiC deposit while Ge-Si melt gives a non-intentional n-type doped layers of either 3C or 6H polytypes depending on growth conditions. However, highly p-type doped 3C heteroepitaxial deposit can be obtained if a small amount of Al is added to the Ge-Si binary liquid phase. This means that the VLS mechanism is very flexible and allows growing either n- or p-type SiC layers of 3C or 6H polytypes.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Jean Lorenzzi, Gabriel Ferro, François Cauwet, Véronique Souliere, Davy Carole,