| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10707516 | Journal of Crystal Growth | 2011 | 4 Pages |
Abstract
BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at room temperature was measured. At higher boron content, cubic BGaN nano-sized clusters were identified. The clusters are 3Â nm wide, homogeneously distributed in size and in density and coherent with the surrounding wurtzite BGaN matrix. Their boron composition was estimated by EDX.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal, K. Pantzas, D Troadec, A. Soltani, L. Largeau, O. Mauguin, A. Ougazzaden,