Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10707536 | Journal of Crystal Growth | 2005 | 9 Pages |
Abstract
In this paper, we report the experimental observations on the effect of plasma hydrogenation in passivating intrinsic point defects, shallow/deep levels and extended defects in low-resistivity undoped CdZnTe crystals. The optical absorption studies show transmittance improvement in the below gap absorption spectrum. Using variable temperature Hall measurement technique, the shallow defect level on which the penetrating hydrogen makes complex, has been identified. In 'compensated' n-type HgCdTe epitaxial layers, hydrogenation can improve the resistivity by two orders of magnitude.
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
S. Sitharaman, R. Raman, L. Durai, Surendra Pal, Madhukar Gautam, Anjana Nagpal, Shiv Kumar, S.N. Chatterjee, S.C. Gupta,