Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10707597 | Journal of Crystal Growth | 2005 | 6 Pages |
Abstract
GaN bulk crystals are grown at moderate temperature and pressure from solution using solid GaN as the feedstock. Gallium-free solvents composed of Li3N plus fluoride salts enable GaN feedstock to be dissolved and transported through the liquid phase then deposited in a cooler location within the crucible. Growth parameters are presented along with characterization data collected for resulting GaN crystals. As a preliminary result, single crystals 0.5Â mm long with a rhombic cross section (0.1Â mm across) have been grown. The long axis of the crystals is aligned with the r direction.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
B.N. Feigelson, R.L. Henry,