| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10707622 | Journal of Crystal Growth | 2005 | 6 Pages |
Abstract
Properties of aluminum nitride layers grown by hydride vapor phase epitaxy (HVPE) on 2 in sapphire and silicon carbide (SiC) substrates are described. Thickness of grown AlN layers ranged from 1 to 20 μm for the material grown on sapphire and from 5 to 75 μm for the material grown on SiC. The layers were free of cracks. Surface morphology, crystal quality, electrical resistivity, and optical transparency of grown AlN layers were studied. 2 in free-standing AlN wafers were fabricated.
Related Topics
Physical Sciences and Engineering
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Condensed Matter Physics
Authors
O. Kovalenkov, V. Soukhoveev, V. Ivantsov, A. Usikov, V. Dmitriev,