Properties of InGaN blue laser diodes grown on bulk GaN substrates

High-pressure growth from solution is at present the only method able to provide true bulk GaN monocrystals. In this paper, we would like to demonstrate that in spite of their small, centimeter range size, they can become a technological platform for the realization of high-quality violet and near-UV laser diodes. We used MOVPE technique to deposit InGaN/AlGaN/GaN layers forming a separate confinement heterostructure laser diode. These devices are characterized by a low density of dislocations (∼105 cm−2) and a high optical output power of 1.9 W, measured in short pulses (30 ns) to prevent the structure from overheating. We will briefly discuss the challenges we face during the process of optimization of these devices.