Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10707722 | Journal of Crystal Growth | 2005 | 7 Pages |
Abstract
The growth of highly lattice-mismatched InAs0.3Sb0.7 films on (1Â 0Â 0) GaAs substrates by magnetron sputtering has been investigated and even epitaxial InAs0.3Sb0.7 films have been successfully obtained. A strong effect of the growth conditions on the film structure was observed, revealing that there was a growth mechanism transition from three-dimensional nucleation growth to epitaxial layer-by-layer growth mode when increasing the substrate temperature. A qualitative explanation for that transition was proposed and the critical conditions for the epitaxial layer-by-layer growth mode were also discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Changtao Peng, NuoFu Chen, Jinliang Wu, Zhigang Yin, Yude Yu,