Preparation and study of stoichiometric ZnO by MOCVD technique

The effects of growth temperature on the optical and electronics properties of ZnO thin films, grown on n-Si(1 0 0) substrate by plasma-assisted MOCVD, were investigated by X-ray diffraction (XRD), X-ray photoelectron spectrometer (XPS), photoluminescence (PL), and Hall measurements. The XRD patterns of the samples indicated that the crystallinity of the ZnO films grown in 500 °C was improved. The XPS spectra showed that ZnO films changed from O-rich to Zn-rich after increasing temperature from 400 to 500 °C. Moreover, Hall measurements indicated that the resistivity in 400 °C (>104 Ω cm) was higher than that in 500 °C (3.48×103 Ω cm). The PL spectrum also showed that the ultraviolet emission peak in 400 °C was stronger than that in 500 °C. These results can possibly help improve the understanding of obtaining highly optical films grown on n-Si(1 0 0) substrates.