Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10707775 | Journal of Crystal Growth | 2005 | 7 Pages |
Abstract
(Ba0.50Sr0.50)TiO3 (BST) thin films were deposited on Pt(1Â 1Â 1)/Ti/SiO2/Si(1Â 0Â 0) substrates without and with LaNiO3 (LNO) bufferlayer prepared by pulsed laser deposition (PLD). The BST thin films directly grown on Pt/Ti/SiO2/Si substrates without and with LNO bufferlayer exhibited highly (1Â 0Â 0) and (1Â 1Â 0) orientation, respectively. The dielectric constant of the 800-nm-thick BST films with LNO bufferlayer was 1010 at 1Â MHz, which was higher than that of BST film with non-bufferlayer (â¼851). Also, the tunabilities of BST thin films with (1Â 0Â 0)- and (1Â 1Â 0)-orientation were â¼63% and â¼62%, respectively, at the applied field of 262.5Â kV/cm. Improved dielectric constant has been attributed to LNO bufferlayer.
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
X.G. Tang, H.F. Xiong, L.L. Jiang, H.L.W. Chan,