| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10709548 | Journal of Magnetism and Magnetic Materials | 2012 | 4 Pages |
Abstract
⺠We propose a novel structure of multi-bit magnetic random access memory. ⺠Each cell contains several interconnected storage dots. ⺠Extraordinary Hall effect is used for reading the data. ⺠Four-, eight- and sixteen-state cells have been realized.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
A. Segal, M. Karpovski, A. Gerber,