| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10709872 | Journal of Magnetism and Magnetic Materials | 2011 | 4 Pages |
Abstract
⺠Both XRD and XAS results indicated that Ni2+ ions replace Zn2+ ions substitutionally in the host matrix. ⺠The Zn1âxNixO films with x=0.06 and 0.11 revealed room-temperature ferromagnetism. ⺠The Hall and electrical resistance measurements revealed that the resistivity increased by Ni doping, and all the Ni-doped ZnO films exhibited n-type semiconducting behavior.
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Condensed Matter Physics
Authors
J.J. Lu, T.C. Lin, S.Y. Tsai, T.S. Mo, K.J. Gan,