Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10710046 | Journal of Magnetism and Magnetic Materials | 2012 | 4 Pages |
Abstract
⺠Electron tunneling across a ferroelectric-ferromagnetic composite barrier junction. ⺠TMR effect is different under the same value but opposite direction bias voltage. ⺠This directionality of the electron tunneling enhances with increasing bias voltage.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Jian Wang, Sheng Ju, Z.Y. Li,