Phonon and electron transport in aluminum thin film: Influence of film thickness on electron and lattice temperatures

Influence of film thickness on non-equilibrium energy transport in the aluminum thin film is examined. The solutions of Boltzmann equation and the modified two-equation model are presented to predict electron and phonon temperatures in the film for various film thicknesses. It is found that electron and phonon temperatures predicted from the Boltzmann equation differ from the solution of two-equation model in the film for small film thickness. As the film thickness increases, this difference becomes negligibly small. Two-equation model predicts higher electron and phonon temperatures than those obtained from the solutions of the Boltzmann equation in the vicinity of the high temperature edge. This becomes opposite in the region of the low temperature edge.