The study of optical parameters and DC conductivity of Se100−xHgx thin films

Se100−xHgx bulk samples have been prepared by conventional melt quenching technique. The thin films of the material have been prepared on glass substrate using the thermal evaporation technique. The transmission spectra has been studied to measure the optical constants like absorption coefficient (α), extinction coefficient (K), optical band gap (Eg), Urbach energy (Ee). The DC conductivity (σdc) of Se100−xHgx has been also studied to find the activation energy (ΔEa). The optical band gap increases and Urbach energy first increases then decreases with increase in Hg concentration. DC conductivity and activation energy increases with increase in Hg concentration. These materials are found suitable for the optical disk materials and in optoelectronic devices due to their high absorption coefficient and dependence of reflectance on composition.