| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10714166 | Physica B: Condensed Matter | 2012 | 5 Pages |
Abstract
High quality Mn doped ZnO thin films were grown on c-plane Al2O3 by oxygen plasma assisted molecular beam epitaxy. Photoluminescence spectra were investigated on the ferromagnetic ZnMnO films. An additional emission located at â¼3.32Â eV was observed on these ferromagnetic films for both as-grown and oxygen-annealed samples. It is assigned to the recombination of neutral acceptor bound excitons. The ionization energy of the acceptor was estimated to be 53-80Â meV. The observed ferromagnetism was explained to relate with acceptor-type defects.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Hongliang Bai, Shumin He, Guolei Liu, Qiang Cao, Dapeng Zhu, Yanxue Chen, Shishen Yan, Liangmo Mei,