Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10714377 | Physica B: Condensed Matter | 2011 | 6 Pages |
Abstract
Polycrystalline CdS samples on the SnO2 coated glass substrate were obtained by vacuum evaporation method at low substrate temperatures (TS=200 and 300Â K) instead of the commonly used vacuum evaporation at high substrate temperatures (TS>300Â K). X-ray diffraction studies showed that the textures of the films are hexagonal with a strong (0Â 0Â 2) preferred direction. Circular Cu contacts were deposited on the upper surface of the CdS thin films at 200Â K by vacuum evaporation. The effects of low substrate temperature on the current-voltage (I-V) characteristics of the Cu/CdS/SnO2 structure were investigated in the temperature range 100-300Â K. The Cu/CdS (at 300Â K)/SnO2 structure shows exponential current-voltage variations. However, I-V characteristics of the Cu/CdS (at 200Â K)/SnO2 structure deviate from exponential behavior due to high series resistance. The diodes show non-ideal I-V behavior with an ideality factor greater than unity. The results indicate that the current transport mechanism in the Cu/CdS (at 300Â K)/SnO2 structure in the whole temperature range is performed by tunneling with E00=143Â meV. However, the current transport mechanism in the Cu/CdS (at 200Â K)/SnO2 structure is tunneling in the range 200-300Â K with E00=82Â meV.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
M. Tomakin, M. AltunbaÅ, E. Bacaksız,