| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10715703 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2011 | 7 Pages |
Abstract
⺠ON bias is the worst bias condition for the ON, PASS and OFF bias modes. ⺠Larger gate bias during irradiation leads to more pronounced characteristic degradation. ⺠TID induced STI leakage can be suppressed by negative operating substrate bias voltage. ⺠Negative substrate bias during irradiation leads to larger increase of off-state leakage. ⺠Electric field in the STI oxide greatly influences the device's radiation effect.
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Authors
Zhangli Liu, Zhiyuan Hu, Zhengxuan Zhang, Hua Shao, Ming Chen, Dawei Bi, Bingxu Ning, Shichang Zou,