| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10715718 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2011 | 4 Pages |
Abstract
We have successfully grown crack free BSO (Bi4Si3O12) single crystal using Czochralski pulling technique. A detailed description of the crystal growth procedure and the solutions of the difficulties during the growth process are presented. Results of X-ray diffraction (XRD) showed a single phase of the grown crystal. Photoluminescence and X-rays induced emission spectrum showed a broad emission band in the wavelength range from 350 to 650 nm. The energy resolution for 662 keV gamma rays is measured to be 22% (FWHM) at room temperature. We measured a light output of 1400 photons/MeV for absorbed γ-ray energy. The decay time spectrum contained three components of 2.2 ns (2%), 78.4 ns (42%) and 125.6 ns (56%) at room temperature.
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Authors
Jiang Hua, H.J. Kim, Gul Rooh, H. Park, Sunghwan Kim, JongKyu Cheon,