Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10716128 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2005 | 7 Pages |
Abstract
Based on the results of capacitance-voltage measurements and transient current technique, it was earlier deduced that the n-type bulk of float zone silicon radiation detectors changes type in heavy irradiation. This paper describes the results of measuring the voltages and electric fields with a scanning electron microscope using the voltage-contrast effect, inside radiation detectors that were irradiated with 10Â MeV protons with several fluences. The results confirm the earlier observations and give more accuracy to the electric field measurements.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Kari Leinonen, Tanja Palviainen, Tuure Tuuva, Esa Tuovinen, Jaakko Härkönen, Panja Luukka,