Investigation of type inversion of n-bulk in 10Â MeV proton-irradiated FZ silicon detectors using a scanning electron microscope

Based on the results of capacitance-voltage measurements and transient current technique, it was earlier deduced that the n-type bulk of float zone silicon radiation detectors changes type in heavy irradiation. This paper describes the results of measuring the voltages and electric fields with a scanning electron microscope using the voltage-contrast effect, inside radiation detectors that were irradiated with 10 MeV protons with several fluences. The results confirm the earlier observations and give more accuracy to the electric field measurements.