Evidence for barrier-to-well injection of carriers in high quality ZnO/Zn0.9Mg0.1O multiple quantum wells grown on (111) Si

Article ID	Journal	Published Year	Pages	File Type
10726871	Physics Letters A	2012	4 Pages	PDF

Abstract

âº High quality ZnO/Zn0.9Mg0.1O multiple quantum wells were grown on (111) Si. âº The FWHM and Ïeff of emission from ZnO wells are 17 meV and 183 ps, respectively. âº Temperature-dependent PL is investigated to reveal the behavior of the carriers. âº Evidence for the barrier-to-well injection of carriers is indicated.

Keywords

Epitaxial Photoluminescence

Related Topics

Physical Sciences and Engineering Physics and Astronomy Physics and Astronomy (General)

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Evidence for barrier-to-well injection of carriers in high quality ZnO/Zn0.9Mg0.1O multiple quantum wells grown on (111) Si

Authors

X.H. Pan, H.P. He, Z.Z. Ye, B. Lu, J.Y. Huang,