| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10727528 | Physics Letters A | 2012 | 5 Pages |
Abstract
⺠Anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) of an epitaxial Fe3O4 film was directly compared. ⺠The PHE contains only a twofold angular dependence, but the AMR below 200 K is constituted with both twofold and fourfold symmetric terms. ⺠We proved that the origin of the fourfold symmetry of AMR is related to the lattice symmetry.
Related Topics
Physical Sciences and Engineering
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Authors
C.R. Hu, J. Zhu, G. Chen, J.X. Li, Y.Z. Wu,