Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10728006 | Physics Letters A | 2005 | 6 Pages |
Abstract
Transmission electron microscopy is used to investigate the structural characteristics of epitaxial ZnO thin films grown on (LaAlO3)0.3(Sr0.5Ta0.5O3)0.7(111) (LSAT) by rf plasma-assisted molecular beam epitaxy. It is found that the growth temperature plays a key role in the formation of microstructures in ZnO film. Growth temperature dependence of rotation domain, interface and dislocation structures is studied, and the mechanism for polarity selection is discussed.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Physics and Astronomy (General)
Authors
Yu-Zi Liu, M.J. Ying, X.L. Du, Z.Q. Zeng, Z.X. Mei, J.F. Jia, Q.K. Xue, Z. Zhang,