| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10728071 | Physics Letters A | 2010 | 4 Pages |
Abstract
Molecular-Beam Epitaxy growth of multiple In0.4Ga0.6As layers on GaAs (311)A and GaAs (331)A has been investigated by Atomic Force Microscopy and Photoluminescence. On GaAs (311)A, uniformly distributed In0.4Ga0.6As quantum wires (QWRs) with wider lateral separation were achieved, presenting a significant improvement in comparison with the result on single layer [H. Wen, Z.M. Wang, G.J. Salamo, Appl. Phys. Lett. 84 (2004) 1756]. On GaAs (331)A, In0.4Ga0.6As QWRs were revealed to be much straighter than in the previous report on multilayer growth [Z. Gong, Z. Niu, Z. Fang, Nanotechnology 17 (2006) 1140]. These observations are discussed in terms of the strain-field interaction among multilayers, enhancement of surface mobility at high temperature, and surface stability of GaAs (311)A and (331)A surfaces.
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Authors
Zhiming M. Wang, Vasyl P. Kunets, Yanze Z. Xie, Martin Schmidbauer, Vitaliy G. Dorogan, Yuriy I. Mazur, Gregory J. Salamo,