| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10728794 | Physics Letters A | 2013 | 4 Pages |
Abstract
In this study, we report the observation of memory effect in TiO2-GO nanocomposite films. Electrical properties of the prepared Al/TiO2-GO composite/ITO devices have shown stable and reproducible bipolar resistive switching behavior. The TiO2-GO composite films were prepared using solution method by spin coating technique. Observed results have shown that the inclusion of GO in the TiO2 matrix have exhibited a significant role in the resistive switching mechanism. The device has exhibited an excellent memory characteristic with low operating voltages, good endurance up to 105 cycles and long retention time more than 5Ã103s.
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Authors
V. Senthilkumar, A. Kathalingam, S. Valanarasu, V. Kannan, Jin-Koo Rhee,