Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11001687 | Thin Solid Films | 2018 | 18 Pages |
Abstract
Silicon doped homoepitaxial films were grown on betaâgallium oxide (001) substrates by halide vapor phase epitaxy using gallium monochloride, oxygen and silicon tetrachloride gases as precursors. It was confirmed that the n-type carrier density at room temperature was almost equal to the doped silicon concentration, which was controlled in the range of 1015 to 1018â¯cmâ3. In the doped film with the carrier density of 1â¯Ãâ¯1016â¯cmâ3, the activation energy and the mobility at room temperature were 45.6â¯meV and 145â¯cm2/Vâ
s, respectively. The carrier scattering mechanism in the low carrier density film was dominated by optical phonon scattering with the phonon energy of 33â¯meV. These results suggest that the doped homoepitaxial film grown by halide vapor phase epitaxy is a high quality film with good crystallinity comparable to bulk crystals.
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Materials Science
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Authors
Ken Goto, Keita Konishi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Masataka Higashiwaki, Akito Kuramata, Shigenobu Yamakoshi,