| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 11001702 | Journal of Crystal Growth | 2019 | 11 Pages |
Abstract
In this manuscript, Pt/CH3NH3PbI3 contacts annealing at different temperature are carried out, and the effects of annealing temperature on metal-semiconductor contacts are measured with the model of rectangular transmission line (TLM). It is found that the Pt/CH3NH3PbI3 contact characteristics are complicated as Pt deposited, but at 50â¯Â°C or higher, it shows good Omhic characteristics and the contact resistivity of Pt/CH3NH3PbI3 is about 3.4â¯Ãâ¯10â4â¯Î©Â·cm2. As the temperature reached 100â¯Â°C, the Pt/CH3NH3PbI3 contact features begin to deteriorate due to the decomposition of perovskites proved by the XRD and SEM.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Suzhen Luan, Tiqiang Pang, Yucheng Wang, Renxu Jia,