Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11006479 | Applied Surface Science | 2018 | 40 Pages |
Abstract
In this study, the deposition of Cu2SnS3 (CTS) thin films was carried out at different sulfurization temperatures in the range of 350-550°C under high vacuum of 1â¯Pa using the sputtered Cu/Sn/Cu metal precursor layers in the sulfur vapor atmosphere. In order to reduce the Sn loss, a particular metal stack of Cu/Sn/Cu was used. Single phase monoclinic (M)-CTS thin film was obtained at 500â¯Â°C. The high intensity Raman modes at 292â¯cmâ1 and 350â¯cmâ1 further confirmed the formation of M-CTS. The M-CTS thin film sulfurized at 500â¯Â°C showed a composition of Cu/Snâ¯=â¯1.89 and an optical band gap energy of 0.94â¯eV. Hall effect measurement of the film sulfurized at 500â¯Â°C with Cu/Sn ratio of 1.82 showed an electrical resistivity of 7.30â¯Î©-cm, carrier concentration of 6.29â¯Ãâ¯1017â¯cmâ3, and mobility of 1.36â¯cm2/Vs. Our results indicate that the copper-poor composition with a stacking order of Cu/Sn/Cu is favored in order to attain the single phase M-CTS.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Mohan Reddy Pallavolu, Vasudeva Reddy Minnam Reddy, Babu Pejjai, Dong-seob Jeong, Chinho Park,