Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11008920 | Superlattices and Microstructures | 2018 | 10 Pages |
Abstract
In this work, a novel AlGaN/GaN lateral current regulating diode was proposed and studied. The diode features a MIS-Gated hybrid anode enabling flexibly tailor the forward turn-on voltage and reverse blocking characteristics of the diode. Meanwhile, instead of utilizing the conventional Ohmic cathode, the cathode of the proposed CRD consists a step-graded Schottky extension connecting with the Ohmic contact, which endows the CRD with excellent current regulation capability. The drive current capability, knee voltage and current steadiness can be precisely modulated by tailoring the gradient and length of the Schottky extension at the cathode. The proposed CRD with such a new functionality is of great potential to expand the applications of AlGaN/GaN electronic devices.
Related Topics
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Materials Science
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Authors
Wei Gao, Changxu Dong, Qi Zhou, Kai Hu, Yuanyuan Shi, Dong Wei, Liyang Zhu, Anbang Zhang, Yu Shi, Qian Cheng, Wanjun Chen, Bo Zhang,