Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11008947 | Superlattices and Microstructures | 2018 | 10 Pages |
Abstract
In this paper, we conducted a numerical analysis on novel Normally-off PGaN gate AlGaN/GaN heterostructure field effect transistors with junction field plates (JFP-HFET). The breakdown voltage (BV) was significantly improved with the introduction of the junction field plate (JFP), which can make a rectangular distribution of the electric field in the GaN channel between the gate and the drain. The highest BV of 1340â¯V of JFP-HFET could be achieved with the gate to the drain distance Lgdâ¯=â¯6â¯Î¼m, the length of the P-type region of the JFP Lpâ¯=â¯5.8â¯Î¼m, the thickness of the JFP Tjâ¯=â¯500â¯nm, the doping concentration of P-type region of the JFP Npâ¯=â¯1â¯Ãâ¯1017â¯cmâ3, and the Al fraction of the AlGaN JFP xAlâ¯=â¯0.25. The optimum parameters of the JFP-HFET were achieved by considering both the principle of charge balance and the practical fabrication of the III-V devices. The highest Baliga's figure of merit (BFOM) 1.2â¯GW/cm2 was obtained under the conditions of Lgdâ¯=â¯6â¯Î¼m, Lpâ¯=â¯5.8â¯Î¼m, Tjâ¯=â¯100â¯nm, Npâ¯=â¯6â¯Ãâ¯1017â¯cmâ3, and xAlâ¯=â¯0.3. CV, turn-on and turn-off processes revealed that the JFP-HFET showed better switching characteristics than that of the HFET with metal field plate.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Zhiyuan Bai, Jiangfeng Du, Hao Wang, Xiaoyun Li, Qi Yu,