| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 11008970 | Superlattices and Microstructures | 2018 | 6 Pages |
Abstract
In this article, the validity of the formulation presented in a recent paper has been questioned. It is pointed out that the built-in potential at the gate of a metal-semiconductor field effect transistor has been erroneously considered, as a result of which the related mathematical formulations and calculations presented in the paper become invalid.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Manas Pal,