| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 11008971 | Superlattices and Microstructures | 2018 | 4 Pages |
Abstract
In this paper, a reply to a to a recent article entitled “Comments on A-theoretical study on the linearity of the Id-T curve of a SiC MESFET for sensor application” is given which opines that the functional form of built-in-potential of a metal-semiconductor junction is considered erroneously in the original publication. On the contrary to the comment, this article justifies the original work with suitable logic and supportive references.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Sutanu Dutta,