Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11009394 | Data in Brief | 2018 | 10 Pages |
Abstract
The data included in this article provides additional supplementary information on our recent publication describing “Inducing tunable switching behavior in a single memristor” [1]. Analyses of micro/nano-structural and compositional changes induced in a resistive oxide memory during resistive switching are carried out. Chromium doped strontium titanate based resistance change memories are fabricated in a capacitor-like metal-insulator-metal structure and subjected to different biasing conditions to set memory states. Transmission electron microscope based cross-sectional analyses of the memory devices in different memory states are collected and presented.
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Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
Taimur Ahmed, Sumeet Walia, Edwin L.H. Mayes, Rajesh Ramanathan, Paul Guagliardo, Vipul Bansal, Madhu Bhaskaran, J. Joshua Yang, Sharath Sriram,