Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11011453 | Materials Chemistry and Physics | 2019 | 8 Pages |
Abstract
Semiconducting silicides are highly promising materials for applications in thermoelectric, photovoltaic and optoelectronic devices. Here, using ab-initio density functional theory, the lattice dynamics, dielectric properties, Infrared (IR) refletivity and Raman intensity spectra of Nowotny chimney-ladder semiconducting silicide Ru2Si3 are investigated. The zone-center phonon mode frequencies are found to be in the range 80-510â¯cmâ1. The Born effective charge tensor, oscillator strength and Infrared activity is found to largest for the mode with frequency 422â¯cmâ1 which is primarily contributed by displacements of Si atoms. The largest Raman activity is obtained for mode with frequency 479â¯cmâ1 which is also dominated by vibrations of Si atoms. Modified Becke-Johnson (MBJ) exchange potential is used to compute the band gap of Ru2Si3 which improves the band gap by â¼8% as compared to that obtained using LDA. The computed Infrared reflectivity and Raman intensity spectra are expected to provide benchmark first-principles theoertical results for comparison with the experiments.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
M. Ramesh, Manish K. Niranjan,