Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11015716 | Materials Letters | 2019 | 8 Pages |
Abstract
MoS2 has attracted considerable attention given its excellent optoelectronic properties arising from the quantum size effect. Intrinsic defects, especially sulfur vacancies, are common in the as-prepared MoS2 monolayer, significantly restricting monolayer photoluminescence. An efficient method is reported in this paper to passivate the sulfur vacancies of the MoS2 monolayer through low-power-density Ar/O2 plasma treatment. The photoluminescence spectrum shows a dramatic enhancement of â¼150 times, attributed to the transition from trion to exciton and the inhibition of a non-radiative recombination of photo-excitons. Measurement results indicate the formation of Mo-O bonds in the plasma-treated MoS2 monolayer without an obvious etching effect. The strong photoluminescence intensity of the monolayer may have promising applications in optoelectronic devices.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Wei Zhao, Jun Ma, Ping Sun, Kailiang Zhang, Yujie Yuan,